| PART |
Description |
Maker |
| UMC3NT1 UMC5NT2 UMC3NT2 |
Dual Common Base Collector Bias Resistor Transistors(偏置电阻晶体
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| NSB1010XV5T5 NSB1010XV5 |
Dual Digital Transistor
Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
| NSTB1002DXV5T1G |
(NSTB1002DXV5T1G / NSTB1002DXV5T5G) Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| UMC2NT1G UMC5NT2 UMC3NT1G UMC3NT2 UMC5NT2G UMC5 UM |
Dual Bias Resistor Transistors
Dual Common Base-Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SC3547B E000855 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR)
From old datasheet system
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)
|
Toshiba Semiconductor
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
| 2SA733 |
Collector-Base Voltage: VCBO=-60V
|
Guangdong Kexin Industr...
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
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